PRLL5818 datasheet(4/11 Pages) NXP

4 / 11 page

1999 Apr 22

NXP Semiconductors

Product data sheet

Schottky barrier diodes

PRLL5817; PRLL5818;

PRLL5819

ELECTRICAL CHARACTERISTICS

Tamb = 25 °C unless otherwise specified.

Note

Pulse test: tp = 300 μs; δ = 0.02.

THERMAL CHARACTERISTICS

Note

Refer to SOD87 standard mounting conditions.

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

forward voltage

see Fig.2

PRLL5817

IF = 0.1 A

−

320

IF = 1 A

−

450

IF = 3 A

−

750

forward voltage

see Fig.2

PRLL5818

IF = 0.1 A

−

330

IF = 1 A

−

550

IF = 3 A

−

875

forward voltage

see Fig.2

PRLL5819

IF = 0.1 A

−

340

IF = 1 A

−

600

IF = 3 A

−

900

reverse current

VR = VRRMmax; note 1

−

0.5

VR = VRRMmax; Tj = 100 °C

−

diode capacitance

VR = 4 V; f = 1 MHz

PRLL5817

−

PRLL5818

−

PRLL5819

−

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-a

thermal resistance from junction to ambient

note 1

150

K/W

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