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JS28F320J3D-75 데이터시트(PDF) 61 Page - Numonyx B.V |
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JS28F320J3D-75 데이터시트(HTML) 61 Page - Numonyx B.V |
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61 / 68 page ![]() November 2007 Datasheet 308551-05 61 Numonyx™ Embedded Flash Memory (J3 v. D) 13.5 System Interface Information The following device information can optimize system interface software. 13.6 Device Geometry Definition This field provides critical details of the flash device geometry. Table 37: System Interface Information Offset Length Description Add. Hex Code Value 1Bh 1 VCC logic supply minimum program/erase voltage bits 0–3 BCD 100 mV bits 4–7 BCD volts 1B: --27 2.7 V 1Ch 1 VCC logic supply maximum program/erase voltage bits 0–3 BCD 100 mV bits 4–7 BCD volts 1C: --36 3.6 V 1Dh 1 VPP [programming] supply minimum program/erase voltage bits 0–3 BCD 100 mV bits 4–7 HEX volts 1D: --00 0.0 V 1Eh 1 VPP [programming] supply maximum program/erase voltage bits 0–3 BCD 100 mV bits 4–7 HEX volts 1E: --00 0.0 V 1Fh 1 “n” such that typical single word program time-out = 2n µs 1F: --06 64 µs 20h 1 “n” such that typical max. buffer write time-out = 2n µs 20: --07 128 µs 21h 1 “n” such that typical block erase time-out = 2n ms 21: --0A 1 s 22h 1 “n” such that typical full chip erase time-out = 2n ms 22: --00 NA 23h 1 “n” such that maximum word program time-out = 2n times typical 23: --02 256 µs 24h 1 “n” such that maximum buffer write time-out = 2n times typical 24: --03 1024 µs 25h 1 “n” such that maximum block erase time-out = 2n times typical 25: --02 4 s 26h 1 “n” such that maximum chip erase time-out = 2n times typical 26: --00 NA Table 38: Device Geometry Definition Offset Length Description Code See Table Below 27h 1 “n” such that device size = 2n in number of bytes 27: 28h 2 Flash device interface: x8 async x16 async x8/x16 async 28: --02 x8/ x16 28:00,29:00 28:01,29:00 28:02,29:00 29: --00 2Ah 2 “n” such that maximum number of bytes in write buffer = 2n 2A: --05 32 2B: --00 2Ch 1 Number of erase block regions within device: 1. x = 0 means no erase blocking; the device erases in “bulk” 2. x specifies the number of device or partition regions with one or more contiguous same-size erase blocks 3. Symmetrically blocked partitions have one blocking region 4. Partition size = (total blocks) x (individual block size) 2C: --01 1 2Dh 4 Erase Block Region 1 Information 2D: bits 0–15 = y, y+1 = number of identical-size erase blocks 2E: bits 16–31 = z, region erase block(s) size are z x 256 bytes 2F: 30: |
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