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ADF5002 데이터시트(PDF) 3 Page - Analog Devices |
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ADF5002 데이터시트(HTML) 3 Page - Analog Devices |
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3 / 12 page ![]() ADF5002 Rev. 0 | Page 3 of 12 SPECIFICATIONS VDD1 = VDD2 = 3.3 V ± 10%, GND = 0 V; dBm referred to 50 Ω; TA = TMIN to TMAX, unless otherwise noted. Operating temperature range is −40°C to +105°C. Table 1. Parameter Min Typ Max Unit Test Conditions/Comments RF CHARACTERISTICS Input Frequency 4 18 GHz RF Input Sensitivity −10 +10 dBm 4 GHz to 18 GHz Output Power −10 −5 dBm Single-ended output connected into a 50 Ω load −7 −2 dBm Differential outputs connected into a 100 Ω differential load Output Voltage Swing 200 330 mV p-p Peak-to-peak voltage swing on each single-ended output, connected into a 50 Ω load 400 660 mV p-p Peak-to-peak voltage swing on differential output, connected into a 100 Ω differential load 1000 mV p-p Peak-to-peak voltage swing on each single-ended output, no load condition Phase Noise −153 dBc/Hz Input frequency (fIN) = 12 GHz, offset = 100 kHz Reverse Leakage −60 dBm RF input power (PIN) = 0 dBm, RFOUT = 4 GHz Second Harmonic Content −38 dBc Third Harmonic Content −12 dBc Fourth Harmonic Content −20 dBc Fifth Harmonic Content −19 dBc CE INPUT Input High Voltage, VIH 2.2 V Input Low Voltage, VIL 0.3 V POWER SUPPLIES Voltage Supply 3.0 3.3 3.6 V IDD (IDD1 + IDD2) Active 30 60 mA CE is high Power-Down 7 25 mA CE is low |
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