PSMN012-100YS_4

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Product data sheet

Rev. 04 — 23 February 2010

8 of 15

NXP Semiconductors

PSMN012-100YS

N-channel 100V 12m

Ω standard level MOSFET in LFPAK

Fig 9.

Transfer characteristics: drain current as a

function of gate-source voltage; typical values

Fig 10. Gate-source threshold voltage as a function of

junction temperature

Fig 11. Sub-threshold drain current as a function of

gate-source voltage

Fig 12. Normalized drain-source on-state resistance

factor as a function of junction temperature

003aad848

0

25

50

75

100

02

46

(A)

°C

°C

−60

180

120

060

003aad280

2

3

1

4

5

(V)

0

max

typ

min

03aa35

06

4

2

(A)

min

typ

max

003aad774

0

0.8

1.6

2.4

3.2

-60

0

60

120

180

a