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TPD2EUSB30 데이터시트(PDF) 2 Page - Texas Instruments |
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TPD2EUSB30 데이터시트(HTML) 2 Page - Texas Instruments |
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2 / 10 page ![]() GND D+ D– TPD2EUSB30 SLVSA12 – NOVEMBER 2009 www.ti.com CIRCUIT DIAGRAMS DRT Circuit TERMINAL FUNCTIONS TERMINAL TYPE DESCRIPTION DRT NAME PIN NO. D+, D- 1, 2 ESD port High-speed ESD clamp, provides ESD protection to the high-speed differential data lines GND 3 GND Ground ABSOLUTE MAXIMUM RATINGS (1) over operating free-air temperature range (unless otherwise noted) MIN MAX UNIT IO voltage tolerance D+, D– pins 0 6 TA Operating free-air temperature range –40 85 °C Tstg Storage temperature range –65 125 °C IEC 61000-4-2 Contact Discharge D+, D– pins ±8 kV ESD protection IEC 61000-4-2 Air-Gap Discharge D+, D– pins ±8 kV Peak pulse current (tp = 8/20 μs) D+, D– pins 5 A Peak pulse power (tp = 8/20 μs) D+, D– pins 45 W (1) Stresses beyond those listed under "absolute maximum ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum-rated conditions for extended periods may affect device reliability. ELECTRICAL CHARACTERISTICS over operating free-air temperature range (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT VRWM Reverse stand-off voltage D+,D– pins to ground 5.5 V Vclamp Clamp voltage D+,D– pins to ground, IIO = 1 A 8 V IIO Current from IO port to supply pins VIO = 2.5 V, ID = 8 mA 0.01 0.1 μA D+,D– pins, VD Diode forward voltage VIO = 2.5 V, ID = 8 mA 0.6 0.8 0.95 V lower clamp diode, Rdyn Dynamic resistance D+,D– pins, I = 1 A 1 Ω CIO IO capacitance D+,D– pins VIO = 2.5 V 0.7 pF VBR Break-down voltage IIO = 1 mA 7 V 2 Submit Documentation Feedback Copyright © 2009, Texas Instruments Incorporated Product Folder Link(s): TPD2EUSB30 |
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