| 전자부품 데이터시트 검색엔진 |
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25LC1024 데이터시트(PDF) 14 Page - Microchip Technology |
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25LC1024 데이터시트(HTML) 14 Page - Microchip Technology |
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14 / 34 page ![]() 25LC1024 DS22064D-page 14 2010 Microchip Technology Inc. 2.8 PAGE ERASE The Page Erase function will erase all bits (FFh) inside the given page. A Write Enable (WREN) instruction must be given prior to attempting a Page Erase. This is done by setting CS low and then clocking out the proper instruction into the 25LC1024. After all eight bits of the instruction are transmitted, the CS must be brought high to set the write enable latch. The Page Erase function is entered by driving CS low, followed by the instruction code (Figure 2-8), and three address bytes. Any address inside the page to be erased is a valid address. CS must then be driven high after the last bit if the address or the Page Erase will not execute. Once the CS is driven high, the self-timed Page Erase cycle is started. The WIP bit in the STATUS register can be read to determine when the Page Erase cycle is complete. If a Page Erase function is given to an address that has been protected by the Block Protect bits (BP0, BP1) then the sequence will be aborted and no erase will occur. FIGURE 2-8: PAGE ERASE SEQUENCE SO SI SCK CS 0 23456789 10 11 29 30 31 1 00 0 0 0 1 01 23 22 21 20 210 Instruction 24-bit Address High-Impedance |
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