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SSM6P35FE 데이터시트(PDF) 2 Page - Toshiba Semiconductor

부품명 SSM6P35FE
상세설명  High-Speed Switching Applications Analog Switch Applications
PDF  5 Pages
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제조업체  TOSHIBA [Toshiba Semiconductor]
홈페이지  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

SSM6P35FE 데이터시트(HTML) 2 Page - Toshiba Semiconductor

  SSM6P35FE Datasheet HTML 1Page - Toshiba Semiconductor SSM6P35FE Datasheet HTML 2Page - Toshiba Semiconductor SSM6P35FE Datasheet HTML 3Page - Toshiba Semiconductor SSM6P35FE Datasheet HTML 4Page - Toshiba Semiconductor SSM6P35FE Datasheet HTML 5Page - Toshiba Semiconductor  
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SSM6P35FE
2008-03-14
2
Electrical Characteristics (Ta = 25°C) (Common to the Q1, Q2)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±10 V, VDS = 0 V
⎯
⎯
±10
μA
Drain–source breakdown voltage
V (BR) DSS
ID = -0.1 mA, VGS = 0 V
-20
⎯
⎯
V
Drain cutoff current
IDSS
VDS = -20 V, VGS = 0 V
⎯
⎯
-1
μA
Gate threshold voltage
Vth
VDS = -3 V, ID = -1 mA
-0.4
⎯
-1.0
V
Forward transfer admittance
⏐Yfs⏐
VDS = -3 V, ID = -50 mA
(Note 2)
77
⎯
⎯
mS
ID = -50 mA, VGS = -4 V
(Note 2)
⎯
4.3
8
ID = -50 mA, VGS = -2.5 V
(Note 2)
⎯
5.6
11
ID = -5 mA, VGS = -1.5 V
(Note 2)
⎯
8.2
22
Drain–source ON-resistance
RDS (ON)
ID = -2 mA, VGS = -1.2 V
(Note 2)
⎯
11
44
Ω
Input capacitance
Ciss
⎯
12.2
⎯
Reverse transfer capacitance
Crss
⎯
6.5
⎯
Output capacitance
Coss
VDS = -3 V, VGS = 0 V, f = 1 MHz
⎯
10.4
⎯
pF
Turn-on time
ton
⎯
175
⎯
Switching time
Turn-off time
toff
VDD = -3 V, ID = -50 mA,
VGS = 0 to -2.5 V
⎯
251
⎯
ns
Drain–source forward voltage
VDSF
ID = 100 mA, VGS = 0 V
(Note 2)
⎯
0.83
1.2
V
Note 2: Pulse test
Switching Time Test Circuit (Common to the Q1, Q2)
(a) Test Circuit
(b) VIN
Usage Considerations
Let Vth be the voltage applied between gate and source that causes the drain current (ID) to below (−1 mA for the
SSM6P35FE). Then, for normal switching operation, VGS(on) must be higher than Vth, and VGS(off) must be lower than
Vth. This relationship can be expressed as: VGS(off) < Vth < VGS(on).
Take this into consideration when using the device.
Handling Precaution
When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is
protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that
come into direct contact with devices should be made of antistatic materials.
(c) VOUT
VDD = -3 V
D.U.
≤ 1%
VIN: tr, tf < 5 ns
(Zout = 50 Ω)
Common Source
Ta
= 25°C
IN
0
−2.5V
10
μs
VDD
OUT
RL
ton
90%
10%
−2.5 V
0 V
90%
10%
toff
tr
tf
VDS (ON)
VDD



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