TPCF8B01 datasheet(1/9 Pages) TOSHIBA

부품명	TPCF8B01

상세설명	Notebook PC Applications Portable Equipment Applications

PDF	9 Pages

Scroll/Zoom	100%

제조업체	TOSHIBA [Toshiba Semiconductor]

홈페이지	http://www.semicon.toshiba.co.jp/eng

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1 / 9 page

TPCF8B01

2009-09-29

1

TOSHIBA Multi-Chip Device Silicon P Channel MOS Type (U-MOS III) / Schottky Barrier Diode

TPCF8B01

Notebook PC Applications

Portable Equipment Applications

• Low drain-source ON resistance: RDS (ON) = 72 mΩ (typ.)

• High forward transfer admittance: |Yfs| = 4.7 S (typ.)

• Low leakage current: IDSS =-10 μA (max) (VDS = -20 V)

• Enhancement-model: Vth = -0.5 to-1.2 V (VDS =-10 V, ID = -200 μA)

• Low forward voltage: VFM(2) = 0.46 V (typ.)

Absolute Maximum Ratings

MOSFET (Ta = 25°C)

Characteristics

Symbol

Rating

Unit

Drain-source voltage

VDSS

-20

V

Drain-gate voltage (RGS = 20 kΩ)

VDGR

-20

V

Gate-source voltage

VGSS

±8

V

DC

(Note 1)

ID

-2.7

Drain current

Pulse

(Note 1)

IDP

-10.8

A

Single pulse avalanche energy

(Note 4)

EAS

1.2

mJ

Avalanche current

IAR

-1.35

A

Repetitive avalanche energy

Single-device value at dual operation

(Note 2a, 3b, 5)

EAR

0.11

mJ

SBD (Ta = 25°C)

Characteristics

Symbol

Rating

Unit

Repetitive peak reverse voltage

VRRM

20

V

Average forward current (Note 2a, 6)

IF(AV)

1.0

A

Peak one cycle surge forward current

(non-repetitive)

IFSM

7(50Hz)

A

Absolute Maximum Ratings for MOSFET and SBD (Ta = 25°C)

Characteristics

Symbol

Rating

Unit

Single-device operation

(Note 3a)

PD (1)

1.35

Drain power

dissipation

(t

= 5 s) (Note 2a) Single-device value at

dual operation (Note 3b)

PD (2)

1.12

Single-device operation

(Note 3a)

PD (1)

0.53

Drain power

dissipation

(t

= 5 s) (Note 2b) Single-device value at

dual operation (Note 3b)

PD (2)

0.33

W

Channel temperature

Tch

150

°C

Storage temperature range

Tstg

-55~150

°C

Note: For (Note 1), (Note 2), (Note 3), (Note 4), (Note 5) and (Note 6), please refer to the next page.

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate

reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and

Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Unit: mm

JEDEC

―

JEITA

―

TOSHIBA

2-3U1C

Weight: 0.011 g (typ.)

Circuit Configuration

1

2

3

4

8

7

6

5

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