IP2010PBF datasheet(1/1 Pages) IRF

부품명	IP2010PBF

상세설명	High Frequency GaN-Based Integrated Power Stage

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제조업체	IRF [International Rectifier]

홈페이지	http://www.irf.com

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iP2010PbF

www.irf.com

High Frequency GaN-Based Integrated

Power Stage

Typical Application

Features

•

Input voltage range of 7V to 13.2V

•

Output voltage range of 0.6V to 5.5V

•

Output current up to 30A

•

Benchmark peak and full load efficiency –

no heat sink required

•

Operation up to 3MHz

•

Ultrafast, PowIRtuneTM gate driver

•

Wireless, low noise flip-chip design

•

Industry-standard TTL compatible Enable

and PWM inputs

•

Small footprint LGA package (7.7mm x

6.5mm x 1.7mm)

•

Pin compatible with iP2011

Applications

•

Server, Storage and Netcom POL

•

General DC/DC Converters

Description

The iP2010 is a fully optimized, high frequency

power

stage

solution

for

synchronous

buck

applications utilizing IR’s Gallium Nitride (GaN)-

based power device technology platform.

The iP2010 integrates a highly sophisticated, ultra

fast PowIRtune driver IC matched to a multi-switch

monolithic GaN-based power device. These devices

are mounted in a completely wireless package

platform to deliver higher efficiency and more than

double the switching frequency of state-of-the-art

silicon-based integrated power stage devices.

With a switching capability up to 3MHz, the iP2010

enables designers to dramatically reduce the value

and size of output capacitors and inductors where

space is at premium.

The device can also be

configured to operate at a lower switching frequency

for applications that require the highest possible

efficiencies.

PD-97461

GaNpowIRTM

유사한 부품 번호 - IP2010PBF

제조업체	부품명	데이터시트	상세설명
Bel Fuse Inc.	IP20	3Mb / 7P	IP68 Waterproof Connectors and Adapters
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International Rectifier	IP2001	806Kb / 10P	Synchronous Buck Multiphase Optimized BGA Power Block
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유사한 설명 - IP2010PBF

제조업체	부품명	데이터시트	상세설명
Intersil Corporation	ISL6580	1Mb / 31P	Integrated Power Stage September 2003
Mitsubishi Electric Sem...	MGF0840G	119Kb / 4P	High-power GaN HEMT (small signal gain stage)
	MGF0843G	130Kb / 4P	High-power GaN HEMT (small signal gain stage)
	MGF0846G	119Kb / 4P	High-power GaN HEMT (small signal gain stage)
Vishay Siliconix	SIC778A	719Kb / 13P	High Performance DrMOS ??Integrated Power Stage 21-May-12
Texas Instruments	LMG5200	299Kb / 23P	GaN Half-Bridge Power Stage
Texas Instruments	LMG3410R050	910Kb / 27P	600-V 50-m(ohm) Integrated GaN Power Stage With Overcurrent Protection
Vishay Siliconix	SIC778A	728Kb / 13P	High Performance DrMOS – Integrated Power Stage 21-May-12
Rohm	BM3G007MUV-LB	1Mb / 29P	650 V GaN HEMT Power Stage 13.Jan.2023 Rev.001
Rohm	BM3G015MUV-LB	1Mb / 29P	650 V GaN HEMT Power Stage 13.Jan.2023 Rev.001

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IP2010PBF 데이터시트(PDF) 1 Page - International Rectifier

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유사한 부품 번호 - IP2010PBF

유사한 설명 - IP2010PBF

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