| 전자부품 데이터시트 검색엔진 |
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TYN256P 데이터시트(PDF) 11 Page - Power Integrations, Inc. |
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TYN256P 데이터시트(HTML) 11 Page - Power Integrations, Inc. |
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11 / 20 page ![]() B 8/99 TNY256 11 NOTES: 1. For a threshold with a negative value, negative hysteresis is a decrease in magnitude of the corresponding threshold. 2. Total current consumption is the sum of I S1 and IDSS when EN/UV pin is shorted to ground (MOSFET not switching) and the sum of I S2 and IDSS when EN/UV pin is open (MOSFET switching). 3. Since the output MOSFET is switching, it is difficult to isolate the switching current from the supply current at the DRAIN. An alternative is to measure the BYPASS pin current at 6.2 V. 4. BYPASS pin is not intended for sourcing supply current to external circuitry. 5. See typical performance characteristics section for BYPASS pin start-up charging waveform. 6. For current limit at other di/dt values, refer to current limit vs. di/dt curve under typical performance characteristics. 7. This parameter is derived from characterization. 8. This parameter is derived from the change in current limit measured at 5X and 10X of the di/dt shown in the I LIMIT specification. 9. Auto-restart on time has the same temperature characteristics as the oscillator (inversely proportional to frequency). Conditions Parameter Symbol SOURCE = 0 V; T j = -40 to 125 °C See Figure 14 (Unless Otherwise Specified) 50 0.5 t EN/UV t DST V µs µs ms % DRAIN Supply Voltage Output EN/UV Delay Output Disable Setup Time Min Typ Max Units OUTPUT (cont.) 10 Auto-Restart, ON-Time Auto-Restart Duty Cycle t AR DC AR 32.0 20 28.9 35.2 T j = 25 °C See Note 10 24 16 See Note 8 |
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