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CS8151 데이터시트(PDF) 3 Page - ON Semiconductor |
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CS8151 데이터시트(HTML) 3 Page - ON Semiconductor |
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3 / 14 page ![]() CS8151 http://onsemi.com 3 MAXIMUM RATINGS* Rating Value Unit Power Dissipation Internally Limited − Output Current (VOUT, RESET, Wake Up) Internally Limited − Reverse Battery −15 V Peak Transient Voltage (60 V Load Dump @ VIN = 14 V) +74 V Maximum Negative Transient (t < 2.0 ms) −50 V ESD Susceptibility (Human Body Model) 2.0 kV ESD Susceptibility (Machine Model) 200 V Logic Inputs/Outputs −0.3 to +6.0 V Storage Temperature Range −55 to +150 °C Lead Temperature Soldering Wave Solder (through hole styles only) (Note 1) Reflow (SMD styles only) (Notes 2 & 3) 260 peak 240 peak °C °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. 10 seconds max 2. 60 seconds max above 183°C 3. −5°C / +0°C allowable conditions *The maximum package power dissipation must be observed ELECTRICAL CHARACTERISTICS (−40°C ≤ TA ≤ 125°C, −40°C ≤ TJ ≤ 150°C, 6.0 V ≤ VIN ≤ 26 V, 100 mA ≤ IOUT ≤ 100 mA, C2 = 47 mF (ESR < 8.0 W), CDelay = 0.1 mF; unless otherwise specified.) Characteristic Test Conditions Min Typ Max Unit Output Section Output Voltage, VOUT 9.0 V < VIN < 16 V 6.0 V < VIN < 26 V, 0 < IOUT < 100 mA 4.90 4.85 5.0 5.0 5.10 5.15 V V Dropout Voltage (VIN − VOUT) IOUT = 100 mA IOUT = 100 mA − − 400 100 600 150 mV mV Load Regulation VIN = 14 V, 100 mA < IOUT < 100 mA − 10 50 mV Line Regulation IOUT = 1.0 mA, 6.0 V < VIN < 26 V − 10 50 mV Ripple Rejection 7.0 V < VIN < 17 V @ f = 120 Hz, IOUT = 100 mA 60 75 − dB Current Limit VOUT = 4.5 V 100 250 − mA Thermal Shutdown − 150 180 210 °C Overvoltage Shutdown VOUT < 1.0 V 50 56 62 V Quiescent Current IOUT = 200 mA (Sleep) IOUT = 50 mA IOUT = 100 mA (Wake Up) − − − 0.4 4.0 12 0.75 − 20 mA mA mA Reverse Current VOUT = 5.0 V, VIN = 0 V − 1.0 1.5 mA RESET Threshold High (RTH) RTH VOUT Increasing VOUT − 0.3 − VOUT − 0.04 V Threshold Low (RTL) RTL VOUT Decreasing 4.5 4.7 4.91 V Hysteresis RTH − RTL 150 200 250 mV Output Low 1.0 V < VOUT RTL, IOUT = 25 mA − 0.2 0.8 V Output High IOUT = 25 mA, VOUT > RTH 3.8 4.2 5.1 V |
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