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PC912XDP512F0MPVR 데이터시트(PDF) 1105 Page - Freescale Semiconductor, Inc |
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PC912XDP512F0MPVR 데이터시트(HTML) 1105 Page - Freescale Semiconductor, Inc |
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1105 / 1348 page ![]() MC9S12XDP512 Data Sheet, Rev. 2.21 Freescale Semiconductor 1107 Chapter 27 512 Kbyte Flash Module (S12XFTX512K4V2) 27.1 Introduction This document describes the FTX512K4 module that includes a 512K Kbyte Flash (nonvolatile) memory. The Flash memory may be read as either bytes, aligned words or misaligned words. Read access time is one bus cycle for bytes and aligned words, and two bus cycles for misaligned words. The Flash memory is ideal for program and data storage for single-supply applications allowing for field reprogramming without requiring external voltage sources for program or erase. Program and erase functions are controlled by a command driven interface. The Flash module supports both block erase and sector erase. An erased bit reads 1 and a programmed bit reads 0. The high voltage required to program and erase the Flash memory is generated internally. It is not possible to read from a Flash block while it is being erased or programmed. CAUTION A Flash word must be in the erased state before being programmed. Cumulative programming of bits within a Flash word is not allowed. 27.1.1 Glossary Command Write Sequence — A three-step MCU instruction sequence to execute built-in algorithms (including program and erase) on the Flash memory. Multiple-Input Signature Register (MISR) — A Multiple-Input Signature Register is an output response analyzer implemented using a linear feedback shift-register (LFSR). A 16-bit MISR is used to compress data and generate a signature that is particular to the data read from a Flash block. 27.1.2 Features • 512 Kbytes of Flash memory comprised of four 128 Kbyte blocks with each block divided into 128 sectors of 1024 bytes • Automated program and erase algorithm • Interrupts on Flash command completion, command buffer empty • Fast sector erase and word program operation • 2-stage command pipeline for faster multi-word program times • Sector erase abort feature for critical interrupt response • Flexible protection scheme to prevent accidental program or erase • Single power supply for all Flash operations including program and erase |
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