MBR735 datasheet(2/5 Pages) ONSEMI

2 / 5 page

MBR735, MBR745

http://onsemi.com

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

MBR735

MBR745

VRRM

VRWM

Average Rectified Forward Current

(TC = 164°C)

Per Device

IF(AV)

7.5

Peak Repetitive Forward Current, (Square Wave, 20 kHz, TC = 168°C)

IFRM

7.5

Non−Repetitive Peak Surge Current

(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)

IFSM

150

Peak Repetitive Reverse Surge Current (2.0 ms, 1.0 kHz)

IRRM

1.0

Storage Temperature Range

Tstg

−65 to +175

°C

Operating Junction Temperature (Note 1)

−65 to +175

°C

Voltage Rate of Change (Rated VR)

dv/dt

10,000

V/ms

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the

Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may

affect device reliability.

1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA.

THERMAL CHARACTERISTICS

Characteristic

Symbol

Value

Unit

Maximum Thermal Resistance, Junction−to−Case

RqJC

3.0

°C/W

Maximum Thermal Resistance, Junction−to−Ambient

RqJA

°C/W

ELECTRICAL CHARACTERISTICS

Characteristic

Symbol

Min

Typ

Max

Unit

Maximum Instantaneous Forward Voltage (Note 2)

(iF = 7.5 Amps, TJ = 125°C)

(iF = 15 Amps, TJ = 125°C)

(iF = 15 Amps, TJ = 25°C)

−

0.48

0.61

0.68

0.57

0.72

0.84

Maximum Instantaneous Reverse Current (Note 2)

(Rated dc Voltage, TJ = 125°C)

(Rated dc Voltage, TJ = 25°C)

−

0.03

0.1

2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.

MBR735 데이터시트(PDF) 2 Page - ON Semiconductor

MBR735 데이터시트(HTML) 2 Page - ON Semiconductor

Html Pages

1 2 3 4 5

데이터시트 다운로드

링크 URL