RECTRON

SEMICONDUCTOR

TECHNICAL SPECIFICATION

FEATURES

* Silicon epitaxial planar diode

* Fast switching

* Surface mounting device

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25

Single phase, half wave, 60 Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

BAV99

SMALL SIGNAL DIODE

Dimensions in inches and (millimeters)

2001-12

MECHANICAL DATA

* Epoxy : Device has UL flammability classification 94V-0

* Weight : apporx. 0.008g

SOT-23

RATINGS

Repetitive Peak Reverse Voltage

Forward Continuous Current at T

Repetitive Peak Forward Current at T

Junction Temperature

Storage Temperature Range

SYMBOL

I

FRM

I

FSM

I

F

Volts

mA

mA

1000

125

-65 to + 150

UNITS

Surge Forward Current at tp < 1 S, at T

mA

BAV99

70

500

150

T

J

Total Power Dissipation

P

D

250

mW

.102 (2.60)

.028 (0.70)

.020 (0.50)

.055 (1.40)

.047 (1.20)

.045 (1.15)

R0.05

(.002)

.033 (0.85)

.094 (2.40)

(A)

(B)

(A)

(C)

(C)