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TPD2EUSB30DRTR 데이터시트(PDF) 2 Page - Texas Instruments

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부품명 TPD2EUSB30DRTR
상세설명  2-CHANNEL ESD SOLUTION FOR SUPER-SPEED (6 GBPS) USB 3.0 INTERFACE
PDF  13 Pages
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제조업체  TI [Texas Instruments]
홈페이지  http://www.ti.com
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TPD2EUSB30DRTR 데이터시트(HTML) 2 Page - Texas Instruments

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GND
D+
D–
TPD2EUSB30
SLVSA12 – NOVEMBER 2009
www.ti.com
CIRCUIT DIAGRAMS
DRT Circuit
TERMINAL FUNCTIONS
TERMINAL
TYPE
DESCRIPTION
DRT
NAME
PIN NO.
D+, D-
1, 2
ESD port
High-speed ESD clamp, provides ESD protection to the high-speed differential data lines
GND
3
GND
Ground
ABSOLUTE MAXIMUM RATINGS
(1)
over operating free-air temperature range (unless otherwise noted)
MIN
MAX
UNIT
IO voltage tolerance
D+, D– pins
0
6
TA
Operating free-air temperature range
–40
85
°C
Tstg
Storage temperature range
–65
125
°C
IEC 61000-4-2 Contact Discharge
D+, D– pins
±8
kV
ESD protection
IEC 61000-4-2 Air-Gap Discharge
D+, D– pins
±8
kV
Peak pulse current (tp = 8/20 μs)
D+, D– pins
5
A
Peak pulse power (tp = 8/20 μs)
D+, D– pins
45
W
(1)
Stresses beyond those listed under "absolute maximum ratings" may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the
specifications is not implied. Exposure to absolute maximum-rated conditions for extended periods may affect device reliability.
ELECTRICAL CHARACTERISTICS
over operating free-air temperature range (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
VRWM
Reverse stand-off voltage
D+,D– pins to ground
5.5
V
Vclamp
Clamp voltage
D+,D– pins to ground,
IIO = 1 A
8
V
IIO
Current from IO port to supply pins
VIO = 2.5 V, ID = 8 mA
0.01
0.1
μA
D+,D– pins,
VD
Diode forward voltage
VIO = 2.5 V, ID = 8 mA
0.6
0.8
0.95
V
lower clamp diode,
Rdyn
Dynamic resistance
D+,D– pins,
I = 1 A
1
CIO
IO capacitance
D+,D– pins
VIO = 2.5 V
0.7
pF
VBR
Break-down voltage
IIO = 1 mA
7
V
2
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Copyright © 2009, Texas Instruments Incorporated
Product Folder Link(s): TPD2EUSB30



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