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Product Description
Ordering Information
Typical Applications
Features
Functional Block Diagram
RF Micro Devices, Inc.
7625 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Optimum Technology Matching® Applied
Si BJT
GaAs MESFET
GaAs HBT
Si Bi-CMOS
SiGe HBT
Si CMOS
13
2
4
RF OUT
RF OUT
RF IN
GND
GND
MARKING - C3
RF2043
GENERAL PURPOSE AMPLIFIER
• Broadband, Low Noise Gain Blocks
• IF or RF Buffer Amplifiers
• Driver Stage for Power Amplifiers
• Final PA for Low Power Applications
• High Reliability Applications
• Broadband Test Equipment
The RF2043 is a general purpose, low cost RF amplifier
IC. The device is manufactured on an advanced Gallium
Arsenide Heterojunction Bipolar Transistor (HBT) pro-
cess, and has been designed for use as an easily-cas-
cadable 50
Ω gain block. Applications include IF and RF
amplification in wireless voice and data communication
products operating in frequency bands up to 6000MHz.
The device is self-contained with 50
Ω input and output
impedances and requires only two external DC biasing
elements to operate as specified. With a goal of
enhanced reliability, the extremely small Micro-X ceramic
package offers significantly lower thermal resistance than
similar size plastic packages.
• DC to >6000MHz Operation
• Internally matched Input and Output
• 11dB Small Signal Gain
• +35dBm Output IP3
• +18.5dBm Output Power
• Extremely Flat Gain Response
RF2043
General Purpose Amplifier
RF204X PCBA
Fully Assembled Evaluation Board
4
Rev A4 010110
0.070
sq.
45°
+1°
0.055
+ 0.005
0.020
+ 0.002
0.040
+ 0.002
NOTES:
1. Shaded lead is pin 1.
2. Darkened areas are metallization.
0.200 sq.
Typ
Package Style: Micro-X Ceramic
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