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Preliminary
4-32
RF2048
Rev A5 010110
4
Absolute Maximum Ratings
Parameter
Rating
Unit
Supply Current
75
mA
Input RF Power
+15
dBm
Operating Ambient Temperature
-40 to +85
°C
Storage Temperature
-60 to +150
°C
Parameter
Specification
Unit
Condition
Min.
Typ.
Max.
Overall
T=25 °C, VD=3.6V, ICC=40mA
Frequency Range
DC to 8000
MHz
Gain
12.2
dB
Freq= 100MHz
12.1
dB
Freq= 1000MHz
10
11.8
dB
Freq=2000MHz
11.5
dB
Freq= 3000MHz
11.3
Freq= 4000MHz
11.0
Freq= 6000MHz
10.2
Freq= 8000MHz
Gain Flatness
±0.2
dB
100MHz to 2000MHz
Noise Figure
5.3
dB
Freq= 2000MHz
Input VSWR
1.6:1
In a 50
Ω system, DC to 3000MHz
1.8:1
In a 50
Ω system, 3000MHz to 8000MHz
Output VSWR
1.5:1
In a 50
Ω system, DC to 3000MHz
1.9:1
In a 50
Ω system, 3000MHz to 8000MHz
Output IP3
+26
dBm
Freq=2000MHz±100kHz, PTONE=-5dBm
Output P1dB
+11.7
dBm
Freq=2000MHz
Reverse Isolation
16.6
dB
Freq=2000MHz
Thermal
ICC=40mA, PDISS=137mW
ThetaJC
213
°C/W
Maximum junction temperature
115
°C
Mean Time Between Failures
1.2x104
years
TAMB=+85°C
Mean Time Between Failures
6.6x106
years
TAMB=+25°C
Mean Time Between Failures
1.7x1011
years
TAMB=-40°C
Power Supply
With 22
Ω bias resistor
Operating Device Voltage
3.0
3.6
4.0
V
At pin 3 with ICC=40mA
Operating Current
40
mA
Caution! ESD sensitive device.
RF Micro Devices believes the furnished information is correct and accurate
at the time of this printing. However, RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).
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