SC415

6

Electrical Characteristics (continued)

Parameter

Conditions

25°C

-40° to 85°C

Units

Min

Typ

Max

Min

Max

PGDx Leakage

1μA

Fault Protection

VDD1 Under-Voltage Lockout

VDD1 Falling Edge

(typical hysteresis 100mV)

4.0

3.7

4.2

V

VOUTx Under-Voltage Fault

VOUTx Falling Edge

-30

-35

-25

%

8

clks

VOUTx Over-Voltage Fault

20

+17

+23

%

5

μsec

Latching,

>10°C Hysteresis

160

°C

Inputs/Outputs

EN1, EN2 Input Low Voltage

VOUTx Disabled

1.2

V

ENx Input -

Forced Continuous Mode Operation

ENx = Open

2.0

V

ENx Input High Voltage

VOUTx Enabled,

Power Save Enabled

3.1

V

ENx Input Resistance

R Pull Up to VDDx

1.5

MΩ

R Pull Down to RTN

1

MΩ

FBx Input Low Voltage

0.3

V

FBx Input High Voltage

VDDx -0.7

V

Power Good Output Low Voltage

R

PGDx

= 10kΩ to VDDx

0.4

V

Gate Drivers

DHx or DLx Rising

30

nsec

DLx Pull-Down Resistance

DL Low

0.8

1.6

Ω

V

DLx

= 2.5V

3.1

A

DLx Pull-Up Resistance

DLx High

2

4

Ω

V

DLx

= 2.5V

1.3

A

DHx Pull-Down Resistance

DHx Low,

BSTx - LXx = 5V

24

Ω

DHx High,

BSTx - LXx = 5V

24

Ω

V

DHx

= 2.5V

1.3

A

Notes:

1) RTON = 1Meg.

2) Guaranteed by design.

3) Semtech’s SmartDrive™ FET drive first pulls DH high with a pull-up resistance of 10Ω (typical) until LX = 1.5V (typical). At this point, an additional pull-up device is

activated, reducing the resistance to 2Ω (typical). This negates the need for an external gate or boost resistor.