RF2301PCBA datasheet(3/10 Pages) RFMD

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RF2301

Rev A8 010717

Function

Description

Interface Schematic

1GND

Low inductance ground connections. Use individual vias to backside

ground plane, placed within 0.030" of pin landing for optimum perfor-

mance.

2GND

Same as pin 1.

3RF IN

DC-coupled RF input. A broadband impedance match is produced by

internal shunt resistive feedback. The DC level is 0V. If a DC voltage is

present from connected circuitry, an external DC-blocking capacitor is

required for the proper DC operating point.

4GND

Same as pin 1.

5GND

Same as pin 1.

6RF OUT

Open drain RF output. A broadband impedance match is produced by

an external 100

Ω resistor to power supply as shown in Application

Schematic 1. Approximately 3dB improvement in gain and output

power can be obtained over at least a 20% bandwidth by replacing the

resistor to power supply with an external chip inductor network as

shown in Application Schematic 2. An external DC-blocking capacitor is

required if the following circuitry is not DC-blocked.

7VDD2

Power supply connections. Bypass with external chip capacitor and

individual via to backside ground plane.

8VDD1

Power supply connections. Bypass with external chip capacitor and

individual via to backside ground plane.

RF IN

RF OUT

DD1

DD2

RF2301PCBA 데이터시트(PDF) 3 Page - RF Micro Devices