2 / 10 page
Preliminary
3-28
RF2320
Rev A8 010417
3
Absolute Maximum Ratings
Parameter
Rating
Unit
Device Current
175
mA
Device Voltage
9
V
Input RF Power
+10
dBm
Output Load VSWR
20:1
Ambient Operating Temperature
-40 to +85
°C
Storage Temperature
-40 to +150
°C
Parameter
Specification
Unit
Condition
Min.
Typ.
Max.
Overall (50
Ω)
T=25 °C, VDD=7V, 50Ω System, PIN=-
10dBm
Frequency Range
5 to 2500
MHz
3dB Bandwidth
Input VSWR
2:1
Appropriate values for the DC blocking
capacitor and bias inductor are required to
maintain this VSWR at the intended operat-
ing frequency range.
Output VSWR
1.3:1
See note for Input VSWR.
Gain
15
dB
At 100MHz
16
dB
At 2000MHz
Gain Flatness
+/-1
dB
From 5MHz to 2500MHz
Noise Figure
1.8
dB
From 5MHz to 900MHz
2.6
dB
From 900MHz to 2500MHz,
Output IP3
35
dBm
At 100MHz
36
dBm
At 1000MHz
Output IP2
39.6
dBm
At 1000MHz
Output P1dB
21.5
dBm
At 100MHz
22.5
dBm
At 1000MHz
18
dBm
At 2000MHz
Reverse Isolation
20
dB
T=25 °C, VDD=9V, 50Ω System, PIN=-
10dBm
Gain
16.5
dB
At 100MHz
16.7
dB
At 1000MHz
Noise Figure
1.8
dB
From 5MHz to 900MHz,
2.6
dB
From 900MHz to 2500MHz,
Output IP3
36
dBm
At 100MHz
36.3
dBm
At 1000MHz
Output IP2
39.8
dBm
At 1000MHz
Output P1dB
23
dBm
At 100MHz
24.7
dBm
At 1000MHz
19.5
dBm
At 2000MHz
Power Supply
Supply Voltage (VDD)6
7
9
V
Operating Current Range
75
85
100
mA
Caution! ESD sensitive device.
RF Micro Devices believes the furnished information is correct and accurate
at the time of this printing. However, RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).
Korean ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
