2 / 6 page
5-44
RF2424
Rev A6 010817
5
Absolute Maximum Ratings
Parameter
Rating
Unit
Supply Voltage
5.5
VDC
Input LO and RF Levels
+6.0
dBm
Operating Ambient Temperature
-40 to +85
°C
Storage Temperature
-40 to +150
°C
Parameter
Specification
Unit
Condition
Min.
Typ.
Max.
Carrier Input
T=25 °C, VCC=3V
Frequency Range
700
1000
MHz
Power Level
-6
+6
dBm
Input impedance
43 + j1.8
Ω
At 900MHz
Modulation Input
Frequency Range
DC
100
MHz
Reference Voltage (VREF)1.6
V
Maximum Modulation (I&Q)
VREF ±0.3
V
Gain Asymmetry
0.2
dB
Quadrature Phase Error
1
°
Input DC Resistance
40
k
Ω
Input Bias Current
40
µA
RF Output
VCC=3V, LO power=-3dBm, LO
freq= 900MHz, I/Q drive level= 0.2VP,SSB
Output Power
+5.0
+7.5
dBm
Output Impedance
50
Ω
Broadband Noise Floor
-140
dBm/Hz
Sideband Suppression
25
35
dB
Carrier Suppression
25
30
dB
IM3 Suppression
25
30
dB
DSB output (+9dBm total power)
Power Down
Turn On/Off Time
100
ns
PD Input Resistance
10
k
Ω
Power Down “ON”
VCC
V
Power Down “OFF”
1.0
1.2
V
Power Supply
Voltage
2.7
5.5
V
Current
45
55
mA
VCC=3V
53
mA
VCC=5V
Power Down
10
µA
Caution! ESD sensitive device.
RF Micro Devices believes the furnished information is correct and accurate
at the time of this printing. However, RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).
Korean ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
