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KC73129MP 데이터시트(PDF) 4 Page - Samsung semiconductor |
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KC73129MP 데이터시트(HTML) 4 Page - Samsung semiconductor |
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4 / 18 page ![]() 1/3 INCH CCD IMAGE SENSOR FOR CCIR CAMERA KC73129MP 4 DC CHARACTERISTICS CLOCK VOLTAGE CONDITIONS Table 3. DC Characteristics Item Symbol Min. Typ. Max. Unit Remark Output amp drain voltage VDD 14.55 15.0 15.45 V Output amp gate voltage VGG 1.75 2.0 2.25 V Output amp source voltage VSS Ground through 680 Ω V ±5% Substrate voltage adjustment range SUB 7.0 14.5 V Fluctuation range after substrate voltage adjusted ∆V SUB -3 3 % Protection circuit bias voltage VL VVL voltage of the vertical clock waveform Output stage drain current IDD 2.5 mA Table 4. Clock Voltage Conditions Item Symbol Min. Typ. Max. Unit Remark Read-out clock voltage VVT 14.55 15.0 15.45 V High level Vertical transfer clock voltage VVH1 ~ VVH4 -0.05 0.0 0.05 V VVH = (VVH1 + VVH2)/2 VVL1 ~ VVL4 -9.5 -9.0 -8.5 V VVL = (VVL3 + VVL4)/2 Horizontal transfer clock voltage VΦH 4.75 5.0 5.25 V High VHL -0.05 0.0 0.05 V Low Charge reset clock voltage VΦRG 4.75 5.0 5.25 V High VRGLH - VRGLL 0.8 V Low Substrate clock voltage VΦSUB 20.0 23.0 25.0 V Shutter |
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