KM44C4103C datasheet(4/20 Pages) SAMSUNG

4 / 20 page

CMOS DRAM

KM44C4003C, KM44C4103C

*Note :

ICC1, ICC3, ICC4 and ICC6 are dependent on output loading and cycle rates. Specified values are obtained with the output open.

ICC is specified as an average current. In ICC1, ICC3 and ICC6 address can be changed maximum once while RAS=VIL. In ICC4,

address can be changed maximum once within one fast page mode cycle time, tPC.

DC AND OPERATING CHARACTERISTICS (Continued)

ICC1* : Operating Current (RAS and CAS, Address cycling @tRC=min.)

ICC2 : Standby Current (RAS=CAS=W=VIH)

ICC3* : RAS-only Refresh Current (CAS=VIH, RAS, Address cycling @tRC=min.)

ICC4* : Fast Page Mode Current (RAS=VIL, CAS, Address cycling @tPC=min.)

ICC5 : Standby Current (RAS=CAS=W=VCC-0.2V)

ICC6* : CAS-Before-RAS Refresh Current (RAS and CAS cycling @tRC=min.)

ICC7 : Battery back-up current, Average power supply current, Battery back-up mode

Input high voltage(VIH)=VCC-0.2V, Input low voltage(VIL)=0.2V, CAS=0.2V,

DQ=Don

′t care, TRC=31.25us(4K/L-ver), 62.5us(2K/L-ver), TRAS=TRASmin~300ns

ICCS : Self Refresh Current

RAS=CAS=0.2V, W=OE=A0 ~ A11=VCC-0.2V or 0.2V,

DQ0 ~ DQ3=VCC-0.2V, 0.2V or Open

Symbol

Power

Speed

Max

Units

KM44C4003C

KM44C4103C

ICC1

Don

′t care

-5

-6

110

100

ICC2

Normal

Don

′t care

ICC3

Don

′t care

-5

-6

110

100

ICC4

Don

′t care

-5

-6

ICC5

Normal

Don

′t care

250

ICC6

Don

′t care

-5

-6

110

100

ICC7

Don

′t care

300

ICCS

Don

′t care

250

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