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K6R1016V1D 데이터시트(PDF) 8 Page - Samsung semiconductor |
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K6R1016V1D 데이터시트(HTML) 8 Page - Samsung semiconductor |
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8 / 11 page ![]() K6R1016V1D CMOS SRAM Revision 3.0 - 8 - June 2002 for AT&T TIMING WAVEFORM OF WRITE CYCLE(3) (CS=Controlled) Address CS tAW tDW tDH Valid Data WE Data in Data out High-Z High-Z(8) UB, LB tCW(3) tWP(2) tAS(4) tWC tWR(5) High-Z High-Z tLZ tWHZ(6) tBW TIMING WAVEFORM OF WRITE CYCLE(2) (OE =Low fixed) Address CS UB, LB WE Data in Data out tWC tCW(3) tBW tWP1(2) tDH tDW tWR(5) tAS(4) tOW tWHZ(6) (10) (9) High-Z Valid Data tAW High-Z |
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