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2SA2016 데이터시트(PDF) 1 Page - Sanyo Semicon Device |
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2SA2016 데이터시트(HTML) 1 Page - Sanyo Semicon Device |
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1 / 5 page ![]() Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein. PNP/NPN Epitaxial Planar Silicon Transistors DC/DC Converter Applications Ordering number:ENN6309A 2SA2016/2SC5569 SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 52501TS KT TA-3259 No.6309–1/5 1.5 0.5 0.4 3.0 0.75 4.5 1.6 0.4 1 2 3 1.5 Package Dimensions unit:mm 2163 [2SA2016/2SC5569] ˚C ˚C Electrical Characteristics at Ta = 25˚C 1 : Base 2 : Collector 3 : Emitter SANYO : PCP (Bottom view) Applications · Relay drivers, lamp drivers, motor drivers, strobes. Features · Adoption of FBET and MBIT processes. · High current capacitance. · Low collector-to-emitter saturation voltage. · High-speed switching. · Ultrasmall package facilitales miniaturization in end products. · High allowable power dissipation. Specifications ( ) : 2SA2016 Absolute Maximum Ratings at Ta = 25˚C Tc=25˚C Mounted on a ceramic board (250mm2 ×0.8mm) Marking : 2SA2016 : AW 2SC5569 : FF Continued on next page. r e t e m a r a Pl o b m y Ss n o i t i d n o Cs g n i t a Rt i n U e g a t l o V e s a B - o t - r o t c e ll o CV O B C 0 8 ) 0 5 – (V e g a t l o V r e t t i m E - o t - r o t c e ll o CV O E C 0 5 ) – (V e g a t l o V e s a B - o t - r e t t i m EV O B E 6 ) – (V t n e r r u C r o t c e ll o CIC 7 ) – (A ) e s l u P ( t n e r r u C r o t c e ll o CI P C 0 1 ) – (A t n e r r u C e s a BIB 2 . 1 ) – (A n o i t a p i s s i D r o t c e ll o CPC 3 . 1W 5 . 3W e r u t a r e p m e T n o i t c n u Jj T 0 5 1 e r u t a r e p m e T e g a r o t Sg t s T 0 5 1 + o t 5 5 – r e t e m a r a Pl o b m y Ss n o i t i d n o C s g n i t a R t i n U n i mp y tx a m t n e r r u C f f o t u C r o t c e ll o CI O B C V B C I , V 0 4 ) – ( = E 0 =1 . 0 ) – (A µ t n e r r u C f f o t u C r e t t i m EI O B E V B E I , V 4 ) – ( = C 0 =1 . 0 ) – (A µ n i a G t n e r r u C C Dh E F V E C I , V 2 ) – ( = C A m 0 0 5 ) – ( =0 0 20 6 5 t c u d o r P h t d i w d n a B - n i a GfT V E C I , V 0 1 ) – ( = C A m 0 0 5 ) – ( = ) 0 9 2 (z H M 0 3 3z H M e c n a t i c a p a C t u p t u Ob o CV B C z H M 1 = f , V 0 1 ) – ( = 8 2 ) 0 5 (F p |
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