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2SC5503 데이터시트(PDF) 1 Page - Sanyo Semicon Device |
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2SC5503 데이터시트(HTML) 1 Page - Sanyo Semicon Device |
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1 / 6 page ![]() Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein. NPN Epitaxial Planar Silicon Transistor VHF to UHF Low-Noise Wide-Band Amplifier Applications Ordering number:ENN6222 2SC5503 SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN O1899TS (KOTO) TA-1712 No.6222–1/6 0.65 0.65 0.5 0.65 0.6 0.3 0.15 0 to 0.1 2.0 1 2 3 4 Specifications Absolute Maximum Ratings at Ta = 25˚C Package Dimensions unit:mm 2161 [2SC5503] Features · Low noise : NF=1.2dB typ (f=1GHz). · High gain : S21e2=15dB typ (f=1GHz). · High cutoff frequency : fT=9.0GHz typ. ˚C ˚C Electrical Characteristics at Ta = 25˚C 1 : Emitter 2 : Collector 3 : Emitter 4 : Base SANYO : MCP4 * : The 2SC5503 is classified by 15mA hFE as follows : Continued on next page. g n i k r a MN G k n a R4 5 h E F 0 8 1 o t 0 90 7 2 o t 5 3 1 r e t e m a r a Pl o b m y Ss n o i t i d n o Cs g n i t a Rt i n U e g a t l o V e s a B - o t - r o t c e ll o CV O B C 6 1V e g a t l o V r e t t i m E - o t - r o t c e ll o CV O E C 8V e g a t l o V e s a B - o t - r e t t i m EV O B E 5 . 1V t n e r r u C r o t c e ll o CIC 0 5A m n o i t a p i s s i D r o t c e ll o CPC m m 0 5 2 ( d r a o b c i m a r e c a n o d e t n u o M 2 × ) m m 8 . 00 0 4W m e r u t a r e p m e T n o i t c n u Jj T 0 5 1 e r u t a r e p m e T e g a r o t Sg t s T 0 5 1 + o t 5 5 – r e t e m a r a Pl o b m y Ss n o i t i d n o C s g n i t a R t i n U n i mp y tx a m t n e r r u C f f o t u C r o t c e ll o CI O B C V B C I , V 0 1 = E 0 =0 . 1A µ t n e r r u C f f o t u C r e t t i m EI O B E V B E I , V 1 = C 0 =0 1A µ n i a G t n e r r u C C D h E F V E C I , V 5 = C A m 5 1 = * 0 9* 0 7 2 t c u d o r P h t d i w d n a B - n i a G fT V E C I , V 5 = C A m 5 1 = 0 . 9z H G e c n a t i c a p a C t u p t u Ob o CV B C z H M 1 = f , V 0 1 = 6 . 01 . 1F p e c n a t i c a p a C r e f s n a r T e s r e v e Re r CV B C z H M 1 = f , V 0 1 = 3 . 0F p |
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