116A datasheet(63/102 Pages) RENESAS

63 / 102 page

REJ03B0297-0100

Rev.1.00

Page 63 of 99

Jul 16, 2010

R32C/116A Group

5. Electrical Characteristics

Notes:

Program/erase definition

This value represents the number of erasures per block.

If the flash memory is programmed/erased n times, each block can be erased n times.

i.e. If 4-word write is performed in 512 different addresses in the block A of 4 Kbyte and then the

block is erased, it is considered the programming/erasure is performed just once.

However a write in the same address more than once for one erasure is disabled (overwrite

disabled).

The data retention time includes the periods when the supply voltage is not applied and no clock is

provided.

Please contact a Renesas Electronics sales office regarding data retention time other than the

above.

Table 5.7

RAM Electrical Characteristics

(VCC = 3.0 to 5.5 V, VSS =0V, and Ta = Topr, unless otherwise noted)

Symbol

Characteristic

Measurement

condition

Value

Unit

Min.

Typ.

Max.

VRDR

RAM data retention voltage

in stop mode

2.0

Table 5.8

Flash Memory Electrical Characteristics

(VCC = 3.0 to 5.5 V, VSS =0V, and Ta = Topr, unless otherwise noted)

Symbol

Characteristic

Value

Unit

Min.

Typ.

Max.

—

Programming and erasure endurance of flash

memory (1)

Program area

1000

times

Data area

10000

times

—

4-word program time

Program area

150

900

µs

Data area

300

1700

µs

—

Lock bit-program time

Program area

500

µs

Data area

140

1000

µs

—

Block erasure time

4 Kbyte block

0.12

3.0

32 Kbyte block

0.17

3.0

64 Kbyte block

0.20

3.0

tSUSP

Suspend latency

250

µs

—

Data retention (2)

Ta = 55°C (3)

years

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