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151 데이터시트(PDF) 87 Page - Renesas Technology Corp

부품명 151
상세설명  RENESAS MCU
PDF  121 Pages
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제조업체  RENESAS [Renesas Technology Corp]
홈페이지  http://www.renesas.com
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151 데이터시트(HTML) 87 Page - Renesas Technology Corp

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REJ03B0230-0110
Rev.1.10
Page 87 of 116
Sep 06, 2010
R32C/151 Group
5. Electrical Characteristics
Notes:
1.
Program/erase definition
This value represents the number of erasure per block.
If the flash memory is programmed/erased n times, each block can be erased n times.
i.e. If a word write is performed in different 16 addresses in a block and then the block is erased, it
is considered the programming/erasure is performed just once. However a write in the same
address more than once for one erasure is disabled (overwrite disabled).
2.
The data retention time includes the periods when the supply voltage is not applied and no clock is
provided.
3.
This data retention includes 3000 hours in Ta = 125°C and 7000 hours in Ta = 85°C.
4.
Contact a Renesas Electronics sales office regarding data retention time other than the above.
Figure 5.3
Power Supply Circuit Timing
Table 5.9
E2dataFlash Electrical Characteristics
(VCC = 3.0 to 5.5 V, VSS =0V, and Ta =Topr, unless otherwise noted)
Symbol
Characteristic
Value
Unit
Min.
Typ.
Max.
—
Programming and erasure endurance of flash memory (1) 100000
times
—
Word program time
100
2000
µs
—
Block erasure time
32 byte block
15
200
ms
tPS
Flash memory circuit start-up stabilization time
35
50
µs
—
Data retention (2)
Ta = 55°C (3, 4)
20
years
Table 5.10
Power Supply Circuit Timing Characteristics
(VCC = 3.0 to 5.5 V, VSS = 0 V, and Ta =Topr, unless otherwise noted)
Symbol
Characteristic
Measurement
condition
Value
Unit
Min. Typ. Max.
td(P-R)
Internal power supply start-up stabilization
time after the main power supply is turned on
2ms
t d(P-R)
VCC
PLL oscillator-
output waveform
Internal power supply start-up
stabilization time after the main
power supply is turned on
Recommended
operating voltage
t d(P-R)
Supply voltage for
internal logic



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