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SST25VF080B 데이터시트(PDF) 9 Page - Silicon Storage Technology, Inc |
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SST25VF080B 데이터시트(HTML) 9 Page - Silicon Storage Technology, Inc |
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9 / 32 page ![]() Data Sheet 8 Mbit SPI Serial Flash SST25VF080B 9 ©2010 Silicon Storage Technology, Inc. S71296-04-000 01/10 Read (25/33 MHz) The Read instruction, 03H, supports up to 25 MHz (for SST25VF080B-50-xx-xxxx) or 33 MHz (for SST25VF080B-80-xx-xxxx) Read. The device outputs the data starting from the specified address location. The data output stream is continuous through all addresses until ter- minated by a low to high transition on CE#. The internal address pointer will automatically increment until the high- est memory address is reached. Once the highest memory address is reached, the address pointer will automatically increment to the beginning (wrap-around) of the address space. Once the data from address location 1FFFFFH has been read, the next output will be from address location 000000H. The Read instruction is initiated by executing an 8-bit com- mand, 03H, followed by address bits [A23-A0]. CE# must remain active low for the duration of the Read cycle. See Figure 5 for the Read sequence. FIGURE 5: Read Sequence 1296 ReadSeq_0.0 CE# SO SI SCK ADD. 01 2 3 4 5 6 7 8 ADD. ADD. 03 HIGH IMPEDANCE 15 16 23 24 31 32 39 40 70 47 48 55 56 63 64 N+2 N+3 N+4 N N+1 DOUT MSB MSB MSB MODE 0 MODE 3 DOUT DOUT DOUT DOUT |
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