| 전자부품 데이터시트 검색엔진 |
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IXTP3N50D2 데이터시트(PDF) 4 Page - IXYS Corporation |
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IXTP3N50D2 데이터시트(HTML) 4 Page - IXYS Corporation |
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4 / 5 page ![]() IXTA3N50D2 IXTP3N50D2 IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. Fig. 7. Normalized RDS(on) vs. Junction Temperature 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 -50 -25 0 25 50 75 100 125 150 TJ - Degrees Centigrade VGS = 0V I D = 1.5A Fig. 8. RDS(on) Normalized to ID = 1.5A Value vs. Drain Current 0.6 1.0 1.4 1.8 2.2 2.6 3.0 01 23 456 78 9 10 ID - Amperes VGS = 0V 5V - - - - TJ = 125ºC TJ = 25ºC Fig. 9. Input Admittance 0 1 2 3 4 5 6 7 8 9 10 -3.5 -3.0 -2.5 -2.0 -1.5 -1.0 -0.5 0.0 0.5 1.0 VGS - Volts TJ = 125ºC 25ºC - 40ºC VDS = 30V Fig. 10. Transconductance 0 1 2 3 4 5 6 01 2 3 456 7 8 9 10 ID - Amperes TJ = - 40ºC VDS = 30V 25ºC 125ºC Fig. 12. Forward Voltage Drop of Intrinsic Diode 0 1 2 3 4 5 6 7 8 9 10 0.4 0.5 0.6 0.7 0.8 0.9 VSD - Volts TJ = 125ºC VGS = -10V TJ = 25ºC Fig. 11. Breakdown and Threshold Voltages vs. Junction Temperature 0.8 0.9 1.0 1.1 1.2 1.3 1.4 -50 -25 0 25 50 75 100 125 150 TJ - Degrees Centigrade VGS(off) @ VDS = 25V BVDSX @ VGS = - 5V |
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