STK20N75F3 datasheet(4/15 Pages) STMICROELECTRONICS

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Electrical characteristics

STK20N75F3

4/15

Doc ID 14849 Rev 2

Electrical characteristics

(TCASE=25°C unless otherwise specified)

Table 4.

On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown

voltage

ID = 250 µA, VGS= 0

IDSS

Zero gate voltage drain

current (VGS = 0)

VDS = Max rating,

VDS = Max rating,Tc=125°C

µA

IGSS

Gate body leakage current

(VDS = 0)

VGS = ± 20V

100

VGS(th)

Gate threshold voltage

VDS= VGS, ID = 250 µA

RDS(on)

Static drain-source on

resistance

VGS= 10 V, ID= 10 A

0.0065 0.0079

Ω

Table 5.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ. Max.

Unit

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS =25 V, f=1 MHz, VGS=0

2480

446

Qgs

Qgd

Total gate charge

Gate-source charge

Gate-drain charge

VDD= 38 V, ID = 20 A

VGS =10 V

(see Figure 14)

40.4

11.6

9.9

Gate input resistance

f=1 MHz Gate DC Bias = 0

Test signal level = 20 mV

open drain

-0.85

Ω

Table 6.

Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max. Unit

td(on)

Turn-on delay time

Rise time

VDD= 37.5 V, ID= 10 A,

RG=4.7 Ω, VGS= 10 V

(see Figure 13)

15.6

16.2

td(off)

Turn-off delay time

Fall time

VDD=37.5 V, ID= 10 A,

RG=4.7 Ω, VGS= 10 V

(see Figure 13)

37.8

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