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STU40N2LH5 데이터시트(PDF) 5 Page - STMicroelectronics |
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STU40N2LH5 데이터시트(HTML) 5 Page - STMicroelectronics |
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5 / 15 page ![]() STD40N2LH5, STU40N2LH5 Electrical characteristics Doc ID 14919 Rev 3 5/15 Table 7. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD ISDM Source-drain current Source-drain current (pulsed)(1) 1. Pulsed: pulse duration = 300µs, duty cycle 1.5% - 40 160 A A VSD Forward on voltage ISD= 20 A, VGS=0 - 1.1 V trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD= 40 A, di/dt =100 A/µs, VDD= 20 V, Tj = 25 °C (Figure 15) - 17.6 9.2 1 ns nC A |
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