MCP1602

DS22061A-page 4

© 2007 Microchip Technology Inc.

1.0

ELECTRICAL

CHARACTERISTICS

Absolute Maximum Ratings †

Output Short Circuit Current..................................Continuous

Power Dissipation (Note 6) .......................... Internally Limited

ESD Protection On All Pins:

HBM..............................................................................3 kV

MM...............................................................................200V

†

Notice: Stresses above those listed under "Maximum

Ratings" may cause permanent damage to the device. This is

a stress rating only and functional operation of the device at

those or any other conditions above those indicated in the

operational sections of this specification is not intended.

Exposure to maximum rating conditions for extended periods

may affect device reliability.

DC CHARACTERISTICS

Electrical Characteristics: Unless otherwise indicated, V

Parameters

Sym

Min

Typ

Max

Units

Conditions

Input Characteristics

Input Voltage

2.7

—

5.5

V

Note 1

Maximum Output Current

500

——

mA

Note 1

Shutdown Current

—

0.05

1

µA

SHDN = GND

Quiescent Current

—45

60

µA

Shutdown/UVLO/Thermal Shutdown Characteristics

SHDN, Logic Input Voltage Low

——

15

SHDN, Logic Input Voltage High

45

——

SHDN, Input Leakage Current

-1.0

±0.1

1.0

µA

Undervoltage Lockout

UVLO

2.40

2.55

2.70

Undervoltage Lockout Hystere-

sis

—

200

—

mV

Thermal Shutdown

—

150

—

°C

Note 5, Note 6

Thermal Shutdown Hysteresis

—10—

°C

Note 5, Note 6

Output Characteristics

Adjustable Output Voltage

Range

0.8

—

4.5

V

Note 2

Reference Feedback Voltage

—0.8

—

V

Feedback Input Bias Current

—

-1.5

—

nA

Note 1: The minimum V

2: Reference Feedback Voltage Tolerance applies to adjustable output voltage setting.

3: V

4: Regulation is measured at a constant junction temperature using low duty cycle pulse testing. Load

regulation is tested over a load range of 0.1 mA to the maximum specified output current. Changes in

output voltage due to heating effects are covered by the thermal regulation specification.

5: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable

allowable power dissipation causes the device to initiate thermal shutdown.

6: The internal MOSFET switches have an integral diode from the L

to the GND pin. In cases where these diodes are forward-biased, the package power dissipation limits

must be adhered too. Thermal protection is not able to limit the junction temperature for these cases.

7: The current limit threshold is a cycle-by-cycle current limit.