STB80NF10 datasheet(4/14 Pages) STMICROELECTRONICS

4 / 14 page

Electrical characteristics

STB80NF10, STP80NF10

4/14

Doc ID 6958 Rev 18

Electrical characteristics

(TCASE=25 °C unless otherwise specified)

Table 4.

On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

breakdown voltage

ID = 250 µA, VGS = 0

100

IDSS

Zero gate voltage

drain current (VGS = 0)

VDS = Max rating

VDS = Max rating @125°C

500

µA

IGSS

Gate-body leakage

current (VDS = 0)

VGS = ±20 V

±100

VGS(th)

Gate threshold voltage

VDS = VGS, ID = 250 µA

RDS(on)

Static drain-source on

resistance

VGS = 10 V, ID = 40 A

0.012

0.015

Ω

Table 5.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

gfs

(1)

Pulsed: pulse duration = 300 µs, duty cycle 1.5%

Forward transconductance

VDS = 25 V , ID =40 A

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS = 25 V, f = 1 MHz,

VGS = 0

5500

700

175

Qgs

Qgd

Total gate charge

Gate-source charge

Gate-drain charge

VDD = 50 V, ID = 80 A,

VGS = 10 V

135

51.3

182

Table 6.

Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

td(off)

Turn-on delay time

Rise time

Turn-off-delay time

Fall time

VDD = 50 V, ID= 40 A,

RG =4.7 Ω, VGS=10 V

(see Figure 15)

116

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