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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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VND5N07 데이터시트(PDF) 1 Page - STMicroelectronics |
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VND5N07 데이터시트(HTML) 1 Page - STMicroelectronics |
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1 / 24 page  December 2008 Rev 3 1/24 24 VND5N07 OMNIFET II fully autoprotected Power MOSFET Features ■ Linear current limitation ■ Thermal shutdown ■ Short circuit protection ■ Integrated clamp ■ Low current drawn from input pin ■ Diagnostic feedback through input pin ■ Esd protection ■ Direct access to the gate of the power mosfet (analog driving) ■ Compatible with standard Power MOSFET Description The VND5N07 is a monolithic device designed in STMicroelectronics VIPower M0 technology, intended for replacement of standard Power MOSFETs from DC to 50KHz applications. Built in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in harsh environments. Fault feedback can be detected by monitoring the voltage at the input pin. Max. on-state resistance (per ch.) RDS (on) 0.2 Ω Current limitation (typ) ILIMH 5 A Drain-Source clamp voltage VCLAMP 70V 1 3 3 2 1 DPAK TO-252 IPAK TO-251 SOT-82FM ISOWATT200 Table 1. Device summary Package Order codes Tube Tape and reel DPAK VND5N07 VND5N0713TR IPAK VND5N07-1 ISOWATT220 VNP5N07FI SOT-82FM VNK5N07FM www.st.com |
유사한 부품 번호 - VND5N07 |
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유사한 설명 - VND5N07 |
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