| 전자부품 데이터시트 검색엔진 |
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STP2NK90Z 데이터시트(PDF) 6 Page - STMicroelectronics |
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STP2NK90Z 데이터시트(HTML) 6 Page - STMicroelectronics |
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6 / 18 page ![]() Electrical characteristics STP2NK90Z - STD2NK90Z - STD2NK90Z-1 6/18 Table 8. Source drain diode Symbol Parameter Test condictions Min Typ. Max Unit ISD Source-drain current 2.1 A ISDM (1) 1. Pulse width limited by safe operating area Source-drain current (pulsed) 8.4 A VSD (2) 2. Pulsed: pulse duration=300µs, duty cycle 1.5% Forward on voltage ISD = 2.1 A, VGS = 0 1.6 V trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 2 A, di/dt = 100 A/µs VDD = 50V (see Figure 20) 415 1.5 7.2 ns µC A trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 2 A, di/dt = 100 A/µs VDD = 50V, Tj = 150°C (see Figure 20) 515 1.9 7.5 ns µC A |
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