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STP25NM50N 데이터시트(PDF) 5 Page - STMicroelectronics

부품명 STP25NM50N
상세설명  N-channel 500 V, 0.11 Ω, 22 A MDmesh??II Power MOSFET TO-220, TO-220FP, I2PAK, D2PAK, TO-247
PDF  18 Pages
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제조업체  STMICROELECTRONICS [STMicroelectronics]
홈페이지  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STP25NM50N 데이터시트(HTML) 5 Page - STMicroelectronics

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STx25NM50N
Electrical characteristics
5/18
Table 7.
Switching times
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
VDD = 250 V, ID = 11 A
RG =4.7 Ω VGS = 10 V
(see Figure 18)
23
23
75
22
ns
ns
ns
ns
Table 8.
Source drain diode
Symbol
Parameter
Test conditions
Min Typ. Max Unit
ISD
ISDM
(1)
1.
Pulse width limited by safe operating area
Source-drain current
Source-drain current (pulsed)
22
88
A
A
VSD
(2)
2.
Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
Forward on voltage
ISD = 22 A, VGS = 0
1.3
V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 22 A, di/dt = 100 A/µs
VDD = 100 V
(see Figure 23)
460
6.9
30
ns
µC
A
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 22 A, di/dt = 100 A/µs
VDD = 100 V, Tj = 150 °C
(see Figure 23)
532
8.25
31
ns
µC
A



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