MSD42SWT1G datasheet(1/2 Pages) ONSEMI

부품명	MSD42SWT1G

상세설명	NPN Silicon General Purpose High Voltage Transistor

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 Semiconductor Components Industries, LLC, 2010

October, 2010 -- Rev. 2

1

Publication Order Number:

MSD42SWT1/D

MSD42SWT1G

NPN Silicon General

Purpose High Voltage

Transistor

This NPN Silicon Planar Transistor is designed for general purpose

amplifier applications. This device is housed in the SC-70/SOT-323

package which is designed for low power surface mount applications.

Features

 These Devices are Pb--Free, Halogen Free/BFR Free and are RoHS

Compliant

MAXIMUM RATINGS (TA =25C)

Rating

Symbol

Value

Unit

Collector-Base Voltage

V(BR)CBO

300

Vdc

Collector-Emitter Voltage

V(BR)CEO

300

Vdc

Emitter-Base Voltage

V(BR)EBO

6.0

Vdc

Collector Current -- Continuous

IC

150

mAdc

THERMAL CHARACTERISTICS

Rating

Symbol

Max

Unit

Power Dissipation (Note 1)

PD

150

mW

Junction Temperature

TJ

150

C

Storage Temperature Range

Tstg

-- 55 to +150

C

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

ELECTRICAL CHARACTERISTICS

Characteristic

Symbol

Min

Max

Unit

Collector-Emitter Breakdown Voltage

(IC =1.0 mAdc,IB =0)

V(BR)CEO 300

--

Vdc

Collector-Base Breakdown Voltage

(IC = 100 mAdc, IE =0)

V(BR)CBO 300

--

Vdc

Emitter-Base Breakdown Voltage

(IE = 100 mAdc, IE =0)

V(BR)EBO

6.0

--

Vdc

Collector-Base Cutoff Current

(VCB = 300 Vdc, IE =0)

ICBO

--

0.1

mA

Emitter--Base Cutoff Current

(VEB =6.0 Vdc, IB =0)

IEBO

--

0.1

mA

DC Current Gain (Note 2)

(VCE =10Vdc,IC =1.0 mAdc)

(VCE =10Vdc,IC =30mAdc)

hFE1

hFE2

25

40

200

--

Collector-Emitter Saturation Voltage

(Note 2) (IC = 200 mAdc,

IB =2.0 mAdc)

VCE(sat)

--

0.5

Vdc

1. Device mounted on a FR-4 glass epoxy printed circuit board using the minimum

recommended footprint.

2. Pulse Test: Pulse Width  300 ms, D.C.  2%.

SC--70 (SOT--323)

CASE 419

STYLE 3

MARKING DIAGRAM

3

1

2

Device

Package

Shipping†

ORDERING INFORMATION

D4

= Device Code

M

= Date Code*

G

= Pb--Free Package

COLLECTOR

3

1

BASE

2

EMITTER

http://onsemi.com

MSD42SWT1G SC--70/SOT--323

(Pb--Free)

3000/Tape & Reel

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

D4 M G

G

1

(Note: Microdot may be in either location)

*Date Code orientation may vary depending

upon manufacturing location.

유사한 부품 번호 - MSD42SWT1G

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ON Semiconductor	MSD42SWT1G	42Kb / 2P	NPN Silicon General Purpose High Voltage Transistor January, 2006 ??Rev. 1

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