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MSB92ASWT1G 데이터시트(PDF) 1 Page - ON Semiconductor |
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MSB92ASWT1G 데이터시트(HTML) 1 Page - ON Semiconductor |
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1 / 3 page ![]() © Semiconductor Components Industries, LLC, 2010 September, 2010 − Rev. 3 1 Publication Order Number: MSB92ASWT1/D MSB92ASWT1G, MSB92AS1WT1G PNP Silicon General Purpose High Voltage Transistor This PNP Silicon Planar Transistor is designed for general purpose amplifier applications. This device is housed in the SC-70/SOT-323 package which is designed for low power surface mount applications. Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (TA = 25°C) Rating Symbol Value Unit Collector-Base Voltage V(BR)CBO −300 Vdc Collector-Emitter Voltage V(BR)CEO −300 Vdc Emitter-Base Voltage V(BR)EBO −5.0 Vdc Collector Current − Continuous IC 500 mAdc Electrostatic Discharge ESD HBMu16,000, MMu2,000 V THERMAL CHARACTERISTICS Rating Symbol Max Unit Power Dissipation (Note 1) PD 150 mW Junction Temperature TJ 150 °C Storage Temperature Range Tstg −55 to +150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Device mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint. Device Package Shipping† ORDERING INFORMATION COLLECTOR 3 1 BASE 2 EMITTER MSB92ASWT1G SC−70 (Pb−Free) 3000/Tape & Reel http://onsemi.com MSB92AS1WT1G SC−70 (Pb−Free) 3000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. SC−70 (SOT−323) CASE 419 STYLE 3 MARKING DIAGRAM 3 1 2 Dx = Device Code M = Date Code* G = Pb−Free Package D3 M G G 1 (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. D5 M G G 1 MSB92ASWT1G MSB92AS1WT1G |
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