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ST10F276Z5 데이터시트(PDF) 192 Page - STMicroelectronics |
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ST10F276Z5 데이터시트(HTML) 192 Page - STMicroelectronics |
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192 / 239 page ![]() Electrical characteristics ST10F276Z5 192/239 Input leakage and external circuit The series resistor utilized to limit the current to a pin (see RL in Figure 47), in combination with a large source impedance, can lead to a degradation of A/D converter accuracy when input leakage is present. Data about maximum input leakage current at each pin is provided in the datasheet (Electri- cal Characteristics section). Input leakage is greatest at high operating temperatures and in general decreases by one half for each 10°C decrease in temperature. Considering that, for a 10-bit A/D converter one count is about 5mV (assuming VAREF = 5 V), an input leakage of 100nA acting though an RL = 50kΩ of external resistance leads to an error of exactly one count (5mV); if the resistance were 100k Ω, the error would become two counts. Eventual additional leakage due to external clamping diodes must also be taken into account in computing the total leakage affecting the A/D converter measurements. Another contribution to the total leakage is represented by the charge sharing effects with the sam- pling capacitance: CS being substantially a switched capacitance, with a frequency equal to the conversion rate of a single channel (maximum when fixed channel continuous conver- sion mode is selected), it can be seen as a resistive path to ground. For instance, assuming a conversion rate of 250 kHz, with CS equal to 4 pF, a resistance of 1MΩ is obtained (REQ = 1 / fCCS, where fC represents the conversion rate at the considered channel). To minimize the error induced by the voltage partitioning between this resistance (sampled voltage on CS) and the sum of RS + RF + RL + RSW + RAD, the external circuit must be designed to respect the following relation: The formula above places constraints on external network design, in particular on resistive path. A second aspect involving the capacitance network must be considered. Assuming the three capacitances CF, CP1 and CP2 are initially charged at the source voltage VA (refer to the equivalent circuit shown in Figure 47), when the sampling phase is started (A/D switch close), a charge sharing phenomena is installed. Figure 48. Charge sharing timing diagram during sampling phase VA RS RF RL RSW RAD ++ + + REQ ------------------------------------------------------------------------------ ⋅ 1 2 --- LSB < VA VA1 VA2 t TS VCS Voltage Transient on CS ∆V < 0.5 LSB 1 2 τ 1 < (RSW + RAD) CS << TS τ 2 = RL (CS + CP1 + CP2) |
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