BYD13G datasheet(1/2 Pages) EIC

부품명	BYD13G

상세설명	CONTROLLED AVALANCHE RECTIFIER DIODES

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제조업체	EIC [EIC discrete Semiconductors]

홈페이지	http://www.eicsemi.com

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BYD13D - BYD13M

CONTROLLED AVALANCHE

RECTIFIER DIODES

PRV : 200 - 1000 Volts

Io : 1.4 Amperes

FEATURES :

* High current capability

* High surge current capability

* High reliability

* Low reverse current

* Low forward voltage drop

MECHANICAL DATA :

* Case : DO-41 Molded plastic

* Epoxy : UL94V-O rate flame retardant

* Lead : Axial lead solderable per MIL-STD-202,

Method 208 guaranteed

* Polarity : Color band denotes cathode end

* Mounting position : Any

* Weight : 0.339 gram

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Rating at 25

°C ambient temperature unless otherwise specified.

Single phase, half wave, 60 Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

SYMBOL

BYD

13D

BYD

13G

BYD

13J

BYD

13K

BYD

13M

UNIT

Maximum Repetitive Peak Reverse Voltage

VRRM

200

400

600

800

1000

V

Maximum RMS voltage

VRMS

140

280

420

560

700

V

Maximum DC Blocking Voltage

VDC

200

400

600

800

1000

V

Minimum Reverse Avalanche Breakdown Voltage

V(BR)R-min

225

450

650

900

1100

V

Maximum Reverse Avalanche Breakdown Voltage

V(BR)R-max

1600

V

Maximum Average Forward Current Ttp = 55°C

IF(AV)

1.4

A

Maximum Peak Forward Surge Current Single half sine wave

superimposed on rated load (JEDEC Method)

Maximum Forward Voltage drop per Diode at IF = 1.0 A

VF

1.05

V

Maximum DC reverse Current

TJ = 25

°C

IR

1

µA

at rated DC Block Voltage

TJ = 165

°C

IR(H)

100

µA

Junction Temperature Range

TJ

175

°C

Storage Temperature Range

TSTG

- 65 to + 175

°C

Page 1 of 2

Rev. 02 : March 25, 2005

RATING

A

20

IFSM

Dimensions in inches and ( millimeters )

DO - 41

0.205 (5.20)

0.160 (4.10)

0.107 (2.72)

0.080 (2.03)

0.034 (0.86)

0.028 (0.71)

1.00 (25.4)

MIN.

1.00 (25.4)

MIN.

* Pb / RoHS Free

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