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BCR162F 데이터시트(PDF) 1 Page - Infineon Technologies AG |
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BCR162F 데이터시트(HTML) 1 Page - Infineon Technologies AG |
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1 / 8 page ![]() 2007-07-23 1 BCR162... PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1 = 4.7kΩ , R2 = 4.7kΩ ) • Pb-free (RoHS compliant) package1) • Qualified according AEC Q101 BCR162/F EHA07183 3 2 1 C E B R1 R 2 Type Marking Pin Configuration Package BCR162 BCR162F WUs WUs 1=B 1=B 2=E 2=E 2=C 2=C - - - - - - SOT23 TSFP-3 1Pb-containing package may be available upon special request Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCEO 50 V Collector-base voltage VCBO 50 Input forward voltage Vi(fwd) 30 Input reverse voltage Vi(rev) 10 Collector current IC 100 mA Total power dissipation- BCR162, TS ≤ 102°C BCR162F, TS ≤ 128°C Ptot 200 250 mW Junction temperature Tj 150 °C Storage temperature Tstg -65 ... 150 |
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