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IPT04Q08-TED 데이터시트(PDF) 2 Page - IP SEMICONDUCTOR CO., LTD.

부품명 IPT04Q08-TED
상세설명  High current density due to double mesa technology
PDF  5 Pages
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제조업체  IPS [IP SEMICONDUCTOR CO., LTD.]
홈페이지  http://www.ipsemiconductor.com
Logo IPS - IP SEMICONDUCTOR CO., LTD.

IPT04Q08-TED 데이터시트(HTML) 2 Page - IP SEMICONDUCTOR CO., LTD.

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ELECTRICAL CHARACTERISTICS (Tj = 25 ℃ unless otherwise specified)
2
STATIC CHARACTERISTICS
Symbol
Test Conditions
Value (MAX)
Unit
VTM
ITM = 5.5A, t p = 380uS
Tj = 25 ℃
1.6
V
IDRM
VD = VDRM
Tj = 25 ℃
5
uA
IRRM
VR = VRRM
Tj = 125 ℃
1
mA
THERMAL RESISTANCES
Symbol
Parameter
Value
Unit
Rth (j
– c)
Junction to case (AC)
2.6
℃/W
Symbol
Test Condition
Quadrant
IPT04Q08-xxD
Unit
TE
DE
SE
AE
IGT
VD = 12V RL = 30
Ω
I
– II – III
IV
MAX
5
5
5
10
10
10
10
25
mA
VGT
ALL
MAX
1.5
V
VGD
VD=VDRM, RL=3.3K
Ω,
Tj = 125 ℃
ALL
MIN
0.2
V
IL
IG = 1.2 IGT
I
– III – IV
MAX
10
10
20
20
mA
II
20
20
40
40
IH
IT = 500mA
MAX
15
15
25
25
mA
dV/dt
VD = 67% VDRM gate open Tj = 125 ℃
MIN
10
10
10
10
V/us
(dV/dt)c
(dV/dt) c=0.8A/ms Tj = 125 ℃
MIN
1
1
5
5
V/us
4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea
TEL : +82-70 - 7574 - 2839, Fax : +82-2-6280-6382, sales@ipsemiconductor.com
IPT04Q08-xxD



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