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BSP297 데이터시트(PDF) 6 Page - Infineon Technologies AG |
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BSP297 데이터시트(HTML) 6 Page - Infineon Technologies AG |
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6 / 8 page ![]() 200 9- 08-18 Page 6 BSP297 Rev. 2.1 9 Drain-source on-state resistance RDS(on) = f (Tj) parameter : ID = 0.66 A, VGS = 10 V -60 -20 20 60 100 °C 180 Tj 0 1 2 3 4 5 6 7 W 8.5 BSP297 typ 98% 10 Typ. gate threshold voltage VGS(th) = f (Tj) parameter: VGS = VDS; ID =400µA -60 -20 20 60 100 °C 160 Tj 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 V 2.2 2% typ. 98% 11 Typ. capacitances C = f (VDS) parameter: VGS=0, f=1 MHz, Tj = 25 °C 0 5 10 15 20 V 30 VDS 1 10 2 10 3 10 pF Crss Coss Ciss 12 Forward character. of reverse diode IF = f (VSD) parameter: Tj 0 0.4 0.8 1.2 1.6 2 2.4 V 3 VSD -2 10 -1 10 0 10 1 10 A BSP297 T j = 25 °C typ T j = 25 °C (98%) T j = 150 °C typ T j = 150 °C (98%) |
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