MRF21045LSR3 datasheet(3/11 Pages) FREESCALE

부품명	MRF21045LSR3

상세설명	RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

PDF	11 Pages

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제조업체	FREESCALE [Freescale Semiconductor, Inc]

홈페이지	http://www.freescale.com

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MRF21045LR3 MRF21045LSR3

RF Device Data

Freescale Semiconductor

Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) (continued)

Characteristic

Symbol

Min

Typ

Max

Unit

Functional Tests (In Freescale Test Fixture, 50 ohm system) — continued

Two--Tone Common--Source Amplifier Power Gain

(VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 500 mA,

f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz)

Gps

—

14.9

—

Two--Tone Drain Efficiency

(VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 500 mA,

f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz)

—

Intermodulation Distortion

(VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 500 mA,

f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz)

IMD

—

--30

—

dBc

Two--Tone Input Return Loss

(VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 500 mA,

f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz)

IRL

—

--12

—

Pout, 1 dB Compression Point

(VDD = 28 Vdc, IDQ = 500 mA, f = 2170 MHz)

P1dB

—

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