MRF313 datasheet(1/1 Pages) ASI

부품명	MRF313

상세설명	NPN SILICON RF TRANSISTOR

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제조업체	ASI [Advanced Semiconductor]

홈페이지	http://www.advancedsemiconductor.com

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A D V A N C E D S E M I C O N D U C T O R, I N C.

REV. A

7525 ETHEL AVENUE

• NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004

1/1

Specifications are subject to change without notice.

CHARACTERISTICS TC = 25 OC

SYMBOL

NONETEST CONDITIONS

MINIMUM TYPICAL MAXIMUM

UNITS

BVCEO

IC = 10 mA

30

V

BVCBO

IC = 0.1 mA

35

V

BVEBO

IE = 1.0 mA

3.0

V

ICEO

VE = 20 V

1.0

mA

hFE

VCE = 10 V

IC = 100 mA

20

150

---

COB

VCB = 28 V

f = 1.0 MHz

3.5

5.0

pF

PG

ηηηη

C

VCC = 28 V

POUT = 1.0 W

f = 400 MHz

15

16

45

dB

%

NPN SILICON RF TRANSISTOR

MRF313

DESCRIPTION:

The

MRF313 is Designed for wide

band Amplifier Applications up to 400

MHz.

FEATURES:

• P

G = 15 dB min. at 1.0 W/ 400 MHz

• Common Emitter for Improved

Stability

• Omnigold™ Metalization System

MAXIMUM RATINGS

IC

150 mA

VCBO

40 V

VCEO

30 V

VEBO

3.0 V

PDISS

6.1 W @ TC = 25

OC

TJ

-65

OC to +200 OC

TSTG

-65

OC to +150 OC

θθθθ

JC

28.5

OC/W

PACKAGE STYLE .200" 4L PILL

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Motorola, Inc	MRF313	63Kb / 4P	HIGH-FREQUENCY TRANSISTOR NPN SILICON
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MRF313 데이터시트(PDF) 1 Page - Advanced Semiconductor

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