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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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IRFS4010PBF 데이터시트(PDF) 2 Page - International Rectifier |
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IRFS4010PBF 데이터시트(HTML) 2 Page - International Rectifier |
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2 / 10 page  IRFS/SL4010PbF 2 www.irf.com Notes: Repetitive rating; pulse width limited by max. junction temperature. Limited by TJmax, starting TJ = 25°C, L = 0.057mH RG = 25Ω, IAS = 106A, VGS =10V. Part not recommended for use above this value . ISD ≤ 106A, di/dt ≤ 1319A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C. Pulse width ≤ 400µs; duty cycle ≤ 2%. S D G
Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS. When mounted on 1" square PCB (FR-4 or G-10 Material). For recom mended footprint and soldering techniques refer to application note #AN-994. Rθ is measured at TJ approximately 90°C RθJC value shown is at time zero Static @ TJ = 25°C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units V(BR)DSS Drain-to-Source Breakdown Voltage 100 ––– ––– V ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.10 ––– V/°C RDS(on) Static Drain-to-Source On-Resistance ––– 3.9 4.7 m Ω VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V IDSS Drain-to-Source Leakage Current ––– ––– 20 ––– ––– 250 IGSS Gate-to-Source Forward Leakage ––– ––– 100 Gate-to-Source Reverse Leakage ––– ––– -100 RG(int) Internal Gate Resistance ––– 2.0 ––– Ω Dynamic @ TJ = 25°C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units gfs Forward Transconductance 189 ––– ––– S Qg Total Gate Charge ––– 143 215 Qgs Gate-to-Source Charge ––– 38 ––– Qgd Gate-to-Drain ("Miller") Charge ––– 50 ––– Qsync Total Gate Charge Sync. (Qg - Qgd) ––– 93 ––– td(on) Turn-On Delay Time ––– 21 ––– tr Rise Time ––– 86 ––– td(off) Turn-Off Delay Time ––– 100 ––– tf Fall Time ––– 77 ––– Ciss Input Capacitance ––– 9575 ––– Coss Output Capacitance ––– 660 ––– Crss Reverse Transfer Capacitance ––– 270 ––– Coss eff. (ER) Effective Output Capacitance (Energy Related)h ––– 757 ––– Coss eff. (TR) Effective Output Capacitance (Time Related)g ––– 1112 ––– Diode Characteristics Symbol Parameter Min. Typ. Max. Units IS Continuous Source Current (Body Diode) ISM Pulsed Source Current (Body Diode) Ã VSD Diode Forward Voltage ––– ––– 1.3 V trr Reverse Recovery Time ––– 72 ––– TJ = 25°C VR = 85V, ––– 81 ––– TJ = 125°C IF = 106A Qrr Reverse Recovery Charge ––– 210 ––– TJ = 25°C di/dt = 100A/µs f ––– 268 ––– TJ = 125°C IRRM Reverse Recovery Current ––– 5.3 ––– A TJ = 25°C ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Conditions VDS = 25V, ID = 106A ID = 106A VGS = 20V VGS = -20V MOSFET symbol showing the VDS = 50V Conditions VGS = 10V f VGS = 0V VDS = 50V ƒ = 1.0MHz See Fig.5 VGS = 0V, VDS = 0V to 80V hSee Fig.11 VGS = 0V, VDS = 0V to 80V g TJ = 25°C, IS = 106A, VGS = 0V f integral reverse p-n junction diode. Conditions VGS = 0V, ID = 250µA Reference to 25°C, ID = 5mA VGS = 10V, ID = 106A f VDS = VGS, ID = 250µA VDS = 100V, VGS = 0V VDS = 100V, VGS = 0V, TJ = 125°C ID = 106A RG = 2.7Ω VGS = 10V f VDD = 65V ID = 106A, VDS =0V, VGS = 10V pF A ––– ––– ––– ––– µA nA nC ns ns nC 180 720 |
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