Parameter

Test Conditions

Min.

Typ.

Max.

Unit

V

nA

μA

Ω

S ( )

pF

ns

nC

V

A

V

ns

μC

2N6790

IRFF220

Document Number 6445

Issue 1

Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed

to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.

Semelab encourages customers to verify that datasheets are current before placing orders.

200

2.0

4.0

100

-100

25

250

0.80

0.92

1.5

260

100

30

40

50

50

50

8.0

14.3

0.9

3.0

2.3

9.0

3.5

14

1.5

400

4.3

f = 1.0MHz

(MOSFET switching times are essentially

independent of operating temperature.)

Modified MOS POWER

symbol showing the intergal

P-N junction rectifier.

Drain – Source Breakdown Voltage

Gate Threshold Voltage

Gate Body Leakage Forward

Gate Body Leakage Reverse

Zero Gate Voltage Drain Current

Static Drain Source On-State

Resistance

Forward Transconductance

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Turn–On Delay Time

Rise Time

Turn–Off Delay Time

Fall Time

Total Gate Charge

Gate To Source Charge

Gate To Drain (“Miller”) Charge

Continuous Source Current (Body

Diode)

Source Current (Body Diode)

Reverse Recovery Time

Reverse Recovery Charge

gfs*

Qg

Qgs

Qgd

STATIC ELECTRICAL RATINGS

DYNAMIC CHARACTERISTICS

BODY– DRAIN DIODE RATINGS & CHARACTERISTICS

,

5

/

Notes

* Pulse Test: Pulse Width

≤ 300μs, δ≤ 2%