Parameter

Test Conditions

Min.

Typ.

Max.

Unit

IRFN250

2N7225U1

Document Number 3352

Issue 2

Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed

to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.

Semelab encourages customers to verify that datasheets are current before placing orders.

Reference to 25°C

f = 1MHz

Drain – Source Breakdown Voltage

Temperature Coefficient of

Breakdown Voltage

Static Drain – Source On–State

Gate Threshold Voltage

Zero Gate Voltage Drain Current

Forward Gate – Source Leakage

Reverse Gate – Source Leakage

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Turn–On Delay Time

Rise Time

Turn–Off Delay Time

Fall Time

Continuous Source Current

Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge

Forward Turn–On Time

200

0.29

0.100

0.105

24

9

25

250

100

–100

3500

700

110

55

115

822

30

60

35

190

170

130

27.4

110

1.9

950

9.0

Negligible

V

V/°C

Ω

V

Ω

µA

nA

pF

nC

nC

ns

A

V

ns

µC

∆BV

DSS

∆T

J

STATIC ELECTRICAL RATINGS

Notes

1) Pulse Test: Pulse Width

≤ 300ms, δ≤ 2%

2) Repetitive Rating – Pulse width limited by maximum junction temperature.

DYNAMIC CHARACTERISTICS

SOURCE – DRAIN DIODE CHARACTERISTICS