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2STN1360 데이터시트(PDF) 3 Page - STMicroelectronics |
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2STN1360 데이터시트(HTML) 3 Page - STMicroelectronics |
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3 / 11 page ![]() 2STD1360, 2STF1360, 2STN1360 Electrical characteristics Doc ID 11783 Rev 2 3/11 2 Electrical characteristics TCASE = 25°C; unless otherwise specified. 2.1 Typical characteristics (curves) Table 4. Electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit ICBO Collector cut-off current (IE = 0) VCB = 80 V 100 nA IEBO Emitter cut-off current (IC = 0) VEB = 6 V 100 nA VBE(on) Base-emitter on voltage VCE = 2 V IC = 100 mA 630 650 730 mV VCE(sat) (1) 1. Pulse test: pulse duration ≤ 300 µs, duty cycle ≤ 2 % Collector-emitter saturation voltage IC = 2 A IB = 100 mA IC = 3 A _ IB = 150 mA 130 180 300 500 mV mV VBE(sat) (1) Base-emitter saturation voltage IC = 2 A _ IB = 100 mA 0.9 1.2 V hFE (1) DC current gain IC = 100 mA_ VCE = 2 V IC = 1 A _ VCE = 2 V 80 160 400 td tr ts tf Resistive load Delay time Rise time Storage time Fall time IC = 3 A VCC = 10 V IB(on) = - IB(off) = 300 mA VBE(off) = - 5 V 17 81 620 54 20 100 720 65 ns ns ns ns fT Transition frequency IC = 0.1 A __ VCE = 10 V 130 MHz Figure 2. DC current gain (VCE = 5 V) Figure 3. DC current gain (VCE = 2 V) |
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